Epitaxial growth of (103)-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100)

Non-c-axis-oriented ferroelectric SrBi2Ta2O9 (SBT) epitaxial thin films wit h (103) orientation have been grown by pulsed laser deposition on buffered Si(100) substrates. For the buffer layers, a heterostructure consisting of MgO(111)/YSZ(100)/Si(100) was applied to induce the growth of a (111)-orien ted SrRuO3 (SRO) bottom electrode. X-ray diffraction theta -2 theta and phi scans revealed well-defined orientation relationships, viz. SBT(103)parall el to SRO(111)parallel to MgO(111)parallel to YSZ(100)parallel to Si(100); SBT[010]parallel to SRO[0(1) over bar1]parallel to MgO[0(1) over bar1]paral lel to YSZ[001]parallel to Si[001]. The ferroelectric measurements of the ( 103)-oriented SBT films showed a remanent polarization (P-r) of 5.2 muC/cm( 2) and a coercive field (E-c) of 76 kV/cm for a maximum applied electric fi eld of 440 kV/cm. (C) 2001 American Institute of Physics.