Dual-probe scanning tunneling microscope: Measuring a carbon nanotube ringtransistor

Citation
H. Watanabe et al., Dual-probe scanning tunneling microscope: Measuring a carbon nanotube ringtransistor, APPL PHYS L, 78(19), 2001, pp. 2928-2930
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
19
Year of publication
2001
Pages
2928 - 2930
Database
ISI
SICI code
0003-6951(20010507)78:19<2928:DSTMMA>2.0.ZU;2-A
Abstract
We have constructed a dual-probe scanning tunneling microscope (D-STM). We used multiwall carbon nanotubes [(NT), diameter: similar to 10 nm] as STM p robes. The D-STM allows us to elucidate the electric property of a sample w ith a spatial resolution of similar to1 nm. Using this system, we have meas ured the current-voltage curves of a single NT ring as a transistor. The cu rves show the possibility of nanometer-scale electronic circuits composed o f NT devices. (C) 2001 American Institute of Physics.