Electron beam-induced carbon masking for electrodeposition on semiconductor surfaces

Carbon patterns were deposited on Si(100) by electron beam-induced contamin ation decomposition. The feasibility of using such patterns as a mask for a subsequent electrochemical deposition of Au is studied. We demonstrate tha t under optimized electrochemical conditions electrodeposition of Au can be blocked selectively by single line carbon deposits in the order of only 1 nm thickness. The lateral resolution of this negative patterning process is in the sub 100 nm range. The principle opens perspectives for high definit ion patterning of semiconductor surfaces by selective electrodeposition. (C ) 2001 American Institute of Physics.