ELECTRICAL-PROPERTIES OF 1N4007 SILICON DIODE

In the case of semiconductor diodes, the temperature range over which the temperature dependence of the forward voltage is linear, can be in creased by lowering the operating current along with the increase of t he sensitivity (dV(f)/dT) which is found to vary logarithmically with I. The temperature and current dependence of forward voltage V-f can b e explained by using the theory of the p-n junction. The capacitance-v oltage (C-V) measurements of p-n junctions are carried out at differen t temperatures and are discussed in light of the theory of the p-n jun ction. The band gap E-g, estimated from V-f-T measurement, is found to be similar to 1.17 eV, whereas it is found to be 1.189 eV from C-V me asurement. (C) 1997 American Institute of Physics.