InP nanoparticles embedded in SiO2 thin films mere prepared by radio-freque
ncy magnetron co sputtering. We analyzed the structure and growth behavior
of the composite films under different preparation conditions. X-ray diffra
ction and Raman spectroscopy analyses indicate that InP nanoparticles have
a polycrystalline structure. The average size of InP nanoparticles is in th
e range of 3-10 mm, The broadening and red shift of the Raman peaks were ob
served, which can be interpreted by the phonon confinement model. Optical t
ransmission spectra indicate that the optical absorption edges of the films
can be modulated in the visible light range. The marked blue shift of the
absorption edge with respect to that of bulk InP is explained by the quantu
m confinement effect. The theoretical values of the blue shift predicted by
the effective mass approximation model are different from the experimental
results for the InP-SiO2 system. Analyses indicate that the exciton effect
ive mass of the InP nanoparticles is not constant and is inverse relative t
o the particles radius, which may be the main reason that results in the di
screpancy between the theoretical and the experimental result. We discussed
the possible transition of the direct band gap to the indirect band gap fo
r InP nanoparticles embedded in SiO2 thin films.