EFFECT OF PROTON IMPLANTATION ON THE DEGRADATION OF GAAS ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS/

Authors
JIANG W GAW C KIELY P LAWRENCE B LEBBY M CLAISSE PR
Citation
W. Jiang et al., EFFECT OF PROTON IMPLANTATION ON THE DEGRADATION OF GAAS ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS/, Electronics Letters, 33(2), 1997, pp. 137-139
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
2
Year of publication
1997
Pages
137 - 139
Database
ISI
SICI code
0013-5194(1997)33:2<137:EOPIOT>2.0.ZU;2-D
Abstract
The electroluminescence (EL) technique is used to analyse the degradat ion mode of VCSELs with proton implantation for current confinement. P oint defects generated by the implantation in the active layer are bel ieved to affect the VCSEL long term reliability.