INP INGAAS DOUBLE-HBT TECHNOLOGY FOR HIGH BIT-RATE COMMUNICATION CIRCUITS/

Authors
CAFFIN D BOUCHE M MEGHELLI M DUCHENOIS AM LAUNAY P
Citation
D. Caffin et al., INP INGAAS DOUBLE-HBT TECHNOLOGY FOR HIGH BIT-RATE COMMUNICATION CIRCUITS/, Electronics Letters, 33(2), 1997, pp. 149-151
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
2
Year of publication
1997
Pages
149 - 151
Database
ISI
SICI code
0013-5194(1997)33:2<149:IIDTFH>2.0.ZU;2-9
Abstract
A InP/InGaAs DHBT technology has been developed to meet the high speed requirements of circuits required in 20 Gbit/s optical communication links. High performance devices were achieved with a current gain over 100 and cutoff frequencies of > 50 GHz. The technology showed excelle nt behaviour in terms of yield and homogeneity. Over 20 Gbit/s digital ICs were realised: among them, a 20 Gbit/s external modulator driver, and a 32 Gbit/s 2:1 multiplexer.