MOCVD InP/AlGalnAs distributed Bragg reflector for 1.55 mu m VCSELs

Authors
Sagnes, I Le Roux, G Meriadec, C Mereuta, A Saint-Girons, G Bensoussan, M
Citation
I. Sagnes et al., MOCVD InP/AlGalnAs distributed Bragg reflector for 1.55 mu m VCSELs, ELECTR LETT, 37(8), 2001, pp. 500-501
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
8
Year of publication
2001
Pages
500 - 501
Database
ISI
SICI code
0013-5194(20010412)37:8<500:MIDBRF>2.0.ZU;2-K
Abstract
A new MOCVD InP/AlGaInAs distributed Bragg reflector for long-wavelength VC SELs is presented. The InP/AlGaInAs system presents a high potential for 1. 55 mum VCSELs owing to the combination of its high refractive index contras t (Deltan similar or equal to 0.34) and its low conduction band discontinui ty (Delta Ec similar or equal to 150meV). InP/AlGaInAs mirrors and one half VCSEL (bottom mirror and A cavity) have been fabricated for the first time using AlGaInAs transparent to 1.55 mum.