50GHz bandwidth photodiodes. attaining a compression pint of +12dBm, have b
een fabricated. The structure design allows an almost complete absorption a
t 25 mum, corresponding to 0.5A/W responsivity and gives a polarisation dep
endence as low: as +/-0.1dB. These components have been realised with a low
-cost technology including etched waveguide input facet. antireflection coa
ting on wafer and cleaving V-grooves.