BSIM3v3-based varactor model

A new varactor model based on the BSIM3v3 model (Berksley short-channel IGF ET model) is presented for the first time to model the behaviour of a silic on-based metal-insulator-semiconductor (MIS) varactor under different bias conditions and operating Frequencies. The root mean square (RMS) errors of the s-parameters between the measured and simulated data are less than 2%. The presented varactor model provides satisfactory performance prediction, which is necessary and critical for realising silicon radio frequency integ rated circuits (RFICs).