Electrical effects of SiNx deposition on GaN MESFETs

Authors
Boudart, B Gaquiere, C Guhel, Y de Jaeger, JC Poisson, MA
Citation
B. Boudart et al., Electrical effects of SiNx deposition on GaN MESFETs, ELECTR LETT, 37(8), 2001, pp. 527-528
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
8
Year of publication
2001
Pages
527 - 528
Database
ISI
SICI code
0013-5194(20010412)37:8<527:EEOSDO>2.0.ZU;2-Q
Abstract
The electrical effects of SINx deposition on GaN MESFETs have been investig ated. Significant effects induced from the dielectric coating have been obs erved depending on the temperature deposition used in the technological pro cess. A power density increase of 30% has been observed after the device pa ssivation performed at 20 degreesC.