High performance C plus Al co-implanted 5000V 4H-SiC P+ iN diode

Authors
Alexandrov, P Tone, K Luo, Y Zhao, JH Burke, T Pan, M Weiner, M
Citation
P. Alexandrov et al., High performance C plus Al co-implanted 5000V 4H-SiC P+ iN diode, ELECTR LETT, 37(8), 2001, pp. 531-533
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
8
Year of publication
2001
Pages
531 - 533
Database
ISI
SICI code
0013-5194(20010412)37:8<531:HPCPAC>2.0.ZU;2-G
Abstract
Planar C plus Al co-implanted 5000V PiN diodes with an effective multistep junction termination extension were desired, modelled and fabricated. The d iode I-V characteristics measured at different temperatures along with the multistep junction extension termination design dimensions are reported, sh owing the realisation of a near-perfect edge termination and a record high current density for the 29.33 mum 1 x 10(15)cm(-3) doped n(-) 4H-SiC drift layer used in this study.