Simulation of energy deposition of protons and 1MeV neutrons in silicon

Authors
Chen, SB Zhang, YM Chen, YS Huang, LX Zhang, YM
Citation
Sb. Chen et al., Simulation of energy deposition of protons and 1MeV neutrons in silicon, HIGH EN P N, 25(4), 2001, pp. 365-370
Citations number
6
Categorie Soggetti
Physics
Journal title
HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
ISSN journal
02543052 → ACNP
Volume
25
Issue
4
Year of publication
2001
Pages
365 - 370
Database
ISI
SICI code
0254-3052(200104)25:4<365:SOEDOP>2.0.ZU;2-2
Abstract
Based on existing cross-section data and general theories, a Monte-Carlo co mputer program named NEUTRON for calculating non-ionizing energy loss (NIEL ) and ionizing energy loss (IEL) of neutrons in materials was written. The amount of IEL & NIEL and their distributions irradiation-induced by 1MeV ne utrons and protons in common semiconductor material Si were calculated with NEUTRON and introduced TRIM95, respectively. These results were analyzed a nd compared with literatures.