Improved high-voltage lateral RESURF MOSFETs in 4H-SiC

High-voltage lateral RESURF metal oxide semiconductor held effect transisto rs (MOSFETs) in 4H-SiC have been experimentally demonstrated, that block 90 0 V with a specific on-resistance of 0.5 Omega -cm(2). The RESURF dose in 4 H-SiC to maximize the avalanche breakdown voltage is almost an order of mag nitude higher than that of silicon; however this high RESURF dose leads to oxide breakdown and reliability concerns in thin (100-200 nm) gate oxide de vices due to high electric field (>3-4 MV/cm) in the oxide, Lighter RESURF doses and/or thicker gate asides are required in SIC lateral MOSFETs to ach ieve highest breakdown voltage capability.