Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes

Si/SiGe interband tunnelling diodes have been grown by MBE an high resistiv ity (n(-)) silicon substrates. The device enables a very low voltage, high- speed logic on silicon substrate. A novel self-aligned diode is processed u sing optical lithography and dopant-selective wet chemical etching. A maxim um speed index for a 60 mum(2) anode area device is evaluated to 2.2 ns/V r esulting in a switching speed of 0.5 ns. A logic latch built of two series connected diodes (MOBILE principle) is demonstrated, showing very robust lo gic operation at a supply voltage as low as 0.3 V. The used technology may be used for a co-integration with both SiGe heterostructure bipolar- and fi eld effect transistor technology and may contribute to future low-voltage h igh speed logic on Si-substrates.