M. Sanden et al., Modeling the variation of the low-frequency noise in polysilicon emitter bipolar junction transistors, IEEE ELEC D, 22(5), 2001, pp. 242-244
The variation of the low-frequency noise in polysilicon emitter bipolar jun
ction transistors (BJTs) was investigated as a function of emitter area (A(
E)) For individual BJTs with submicron-sized As, the low-frequency noise st
rongly deviated from a 1/f-dependence. The averaged noise varied as 1/f, wi
th a magnitude proportional to A(E)(-1), while the variation in the noise l
evel was found to vary as A(E)(-1.5). A new expression that takes into acco
unt this deviation is proposed for SPICE modeling of the the low-frequency
noise, The traps responsible for the noise were located to the thin SiO2 in
terface between the polysilicon and monosilicon emitter, The trap's energy
level, areal concentration and capture cross-section were estimated to 0.31
eV, 6 x 10(8) cm(-2) and 2 x 10(-19) cm(2), respectively.