Polysilicon TFT technology for active matrix OLED displays

Citation
M. Stewart et al., Polysilicon TFT technology for active matrix OLED displays, IEEE DEVICE, 48(5), 2001, pp. 845-851
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
5
Year of publication
2001
Pages
845 - 851
Database
ISI
SICI code
0018-9383(200105)48:5<845:PTTFAM>2.0.ZU;2-L
Abstract
The integration of active matrix polysilicon TFT technology with organic li ght emitting diode (OLED) displays has been investigated with the goal of p roducing displays of uniform brightness. This work identifies and addresses several process integration issues unique to this type of display which ar e important in achieving bright and uniform displays. Rapid thermal process ing (RTP) has been incorporated to achieve uniform polysilicon microstructu re, along with silicides to reduce parasitic source and drain series resist ance. Using these processes, TFT drain current nonuniformity has been reduc ed below 5% for 90% of the devices. This work also introduces transition me tals to produce low resistance contacts to indium-tin-oxide (ITO) and to el iminate hillock formation in the aluminum metallization, These processes, a long with spin on glasses for planarization, have been used to produce func tional active matrix arrays for OLED displays. The final array pixel perfor mance is also presented.