Optical characteristics of silicon semiconductor bridges under high current density conditions

The optical emission spectra (180-700 nm) of plasma produced by a semicondu ctor bridge (SCB) with aluminum or tungsten electrodes have been measured a nd analyzed. The spatially and temporally resolved emission spectra of the SCB device have provided insights into the dynamic discharge of the bridge, The plasma electron temperature of the SCB device was measured using the c omparison of the continuum emission of the bridge with the calculated optic al emission spectra for a gray body source, Measured electron temperatures in the plasma produced by the bridges are related to the capacitor discharg ing voltage. The best estimates indicate that 4100-5500 degreesK was measur ed for Al-electrode SCB device and 5650-6000 degreesK for W-electrode SCB d evice.