Excess currents induced by hot hole injection and FN electron injection inthin SiO2 films

The behavior of excess currents induced by Fowler-Nordheim electron injecti on stress (FN electron injection) has been investigated for 6.0-nm oxides. Excess currents are induced by FN electron injection in 6.0-nm oxides toget her with positive charges being induced in it. To clarify the role of hole injection in FN electron injection, the behavior of excess currents induced by substrate hot hole injection has also been investigated in 6.0-nm oxide s. The leakage behavior after hot hole injection is the same as FN electron injection. The excess currents induced both by the FN electron injection a nd by the substrate hot hole injection are due to trap-assisted tunneling a nd field enhancement at the cathode due to the positive trapped charge, The charge centroid of the positive charges induced by both stresses are locat ed 3.0 nm from the Si/SiO2 interface which is at the center of 6.0-nm oxide . The excess currents induced by hot hole injection and FN electron injecti on are caused by traps in SiO2 films produced by injected holes from the an ode.