Characteristics of p-channel Si nano-crystal memory

In this work, the feasibility of p-channel nano-crystal memory with thin ox ide in direct tunneling (DT) regime is demonstrated. By comparing the progr amming characteristics of devices with nano-crystals and devices without na no-crystals, the role of dots as storage node is presented, The programming and erasing mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tu nneling component from inversion layer is dominant. However, valence band e lectron tunneling component from the valence band in the nano-crystal becom es dominant for large gate voltage, In case of erasing, the electron tunnel ing occurs from either the conduction band or the valence band. Finally, th e comparison of retention between programmed holes and electrons shows that holes have longer retention time.