Experimental evidence of interface-controlled mechanism of quasi-breakdownin ultrathin gate oxide

Authors
Guan, H Cho, BJ Li, MF Xu, Z He, YD Dong, Z
Citation
H. Guan et al., Experimental evidence of interface-controlled mechanism of quasi-breakdownin ultrathin gate oxide, IEEE DEVICE, 48(5), 2001, pp. 1010-1013
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
5
Year of publication
2001
Pages
1010 - 1013
Database
ISI
SICI code
0018-9383(200105)48:5<1010:EEOIMO>2.0.ZU;2-O
Abstract
The quasi-breakdown (QB) mechanism or thin gate oxide was investigated thro ugh observation of defects generation during stress. It has been found that the amount of interface traps reaches to the same critical value at the on set point of QB regardless of stress conditions, implying that QB in thin o xide is triggered by a critical amount or interface traps.