Reliability of thin oxides grown on deuterium implanted silicon substrate

Authors
Misra, D Jarwal, RK
Citation
D. Misra et Rk. Jarwal, Reliability of thin oxides grown on deuterium implanted silicon substrate, IEEE DEVICE, 48(5), 2001, pp. 1015-1016
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
5
Year of publication
2001
Pages
1015 - 1016
Database
ISI
SICI code
0018-9383(200105)48:5<1015:ROTOGO>2.0.ZU;2-X
Abstract
We have investigated the reliability of gate oxide with deuterium incorpora ted at the Si/SiO2 interface through low energy ion implantation into the s ilicon substrate before thin gate oxide growth. Deuterium implantation at a dose of 1 x 10 (14)/cm(2) at 25 keV showed improved breakdown characterist ics. Charge-to-breakdown seems to correlate well with the interface state d ensity measured by conductance method.