Investigation of the proportional difference characteristics of MOSFETs

A proportional difference operator method has been presented to study the e lectrical characteristics of MOSFETs in all the operating regimes. It is sh own that the proportional difference drain current versus the drain voltage exhibits a spectrum feature in all regions of operation including the subt hreshold regime and the saturation regime. The amplitude of the spectrum pe ak is related to the effective carrier mobility, and the spectrum peak posi tion responds to the voltage constants in each operating region (including the subthreshold and saturation regime) of a MOSFET. This then enables the more important statistic performance of MOSFETs to be evaluated using the p roportional difference operator method. Analytical expressions for computin g these parameters (such as effective carrier mobility, thermal voltage, th reshold voltage etc.) have been derived and experimental results have been presented.