Impact of probe-to-pad contact degradation on the high frequency characteristics of RF MOSFETs and guidelines to avoid it

Authors
Vandamme, EP Schreurs, D van Dinther, C
Citation
Ep. Vandamme et al., Impact of probe-to-pad contact degradation on the high frequency characteristics of RF MOSFETs and guidelines to avoid it, INT J RF MI, 11(3), 2001, pp. 114-120
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING
ISSN journal
10964290 → ACNP
Volume
11
Issue
3
Year of publication
2001
Pages
114 - 120
Database
ISI
SICI code
1096-4290(200105)11:3<114:IOPCDO>2.0.ZU;2-L
Abstract
Apparent degradation of the RF characteristics of silicon MOSFETs was obser ved under normal operating conditions. We show that it was not caused by in trinsic device degradation but originated from a degradation of the contact resistance between probe and bonding pad, Guidelines, not limited to MOSFE Ts only, are given that enable accurate S-parameter measurements for RF mod elling and reliability assessment. (C) 2001 John Wiley & Sons, Inc.