Ferroelectric thin films prepared by backside pulsed ion-beam evaporation

Ferroelectric (PbTiO3 or Pb(Zr, Ti)O-3) thin films have been successfully p repared on Si(100) or pyrex glasses by backside de position of intense puls ed ion beam evaporation. The ion beam parameters were typically as follows: beam energy = 1.3 MeV, ion-current density on target = 0.7 kA/cm(2) and pu lse duration = 50 ns. The composition of the thin films was in good agreeme nt with that of the original target. The relative dielectric constant at 1 kHz was obtained to be 20, while that obtained by normal front side deposit ion was 150.