Characteristics of (Cr1-x,Al-x)N films prepared by pulsed laser deposition

Chromium aluminum nitride ((Cr1-x, Al-x)N) films have been successfully pre pared by pulsed laser deposition (PLD). Experiments were carried out by cha nging the surface area ratio of the target (Al/(Cr + Al)) from 0 to 100%. F rom the results of energy-dispersive X-ray spectroscopy (EDS) and Rutherfor d backscattering spectroscopy (RBS), we have found that the metal content r atio of the film agreed well with the surface area ratio of the target. The hardness of the (Cr1-x, Alx)N films showed the maximum value (HV similar t o 3000) at x = 0.75. Phase transition from the B1 (NaCl) structure to the B 4 (wurtzite) structure occurred above x = 0.75, which was in reasonable agr eement with the theoretical prediction. The result of the oxidation test re vealed that the CrN film was oxidized at approximately 600 degreesC, wherea s in the (Cr-0.5, Al-0.5)N film, the existence of oxide was not detected in the annealing temperature range of RT to 900 degreesC.