Lasing characteristics of 1.2 mu m highly strained GaInAs/GaAs quantum well lasers

in this study, we demonstrate a highly strained 1.21 mum GaInAs/GaAs quantu m well laser which may be used in high-speed local area networks. Edge emit ting lasers with either a GaInP or AlGaAs cladding layer have been fabricat ed. We have achieved a threshold current density as low as 170 A/cm(2) for GaInP-cladding-layer lasers and a high characteristic temperature To as hig h as 211 K from 30 degreesC to 120 degreesC for AlGaAs-cladding-layer laser s. The material gain coefficient go was estimated to be 1550 cm(-1) which i s comparable to that of 0.98 mum GaInAs lasers. A preliminary lifetime test under heatsink-free CW condition was carried out, which shows no notable d egradation after 300 h. We also demonstrated an AlAs oxide confinement lase r in a 1.2 mum wavelength band.