Depth-resolved cathodoluminescence of III-V nitride films grown by plasma-assisted molecular beam epitaxy

The luminescence properties of m-V nitride films (an undoped GaN, an undope d GaN/Al0.2Ca0.8N multiquantum well, and a p-type Mg-doped GaN films) were investigated using the depth-resolved cathodoluminescence (CL) spectroscopy . From the low- and room-temperature Ct of the undoped GaN and GaN/AlGaN MQ W films, an emission at 2.9 eV was found with the longer penetration depth and is attributed to the higher density of dislocations at the interface be tween the film and the substrate. In order to explain the depth-resolved Ct of the Mg-doped GaN film, the configuration coordinate model is proposed o n the basis of the local strain near the Mg impurities. This model demonstr ates that local strain may play a crucial role in controlling the radiative efficiency, line width, and peak position of the luminescence from the fil m.