Numerical analysis to improve the stabilized-efficiency of amorphous silicon solar cells with new device structure

Numerical analysis using a Scharfetter and Gummel solution of Poisson's equ ation is carried out to find new device structures in order to increase the stabilized-efficiency of amorphous silicon (a-Si) solar oils. The relation ship between density of acceptor states in absorber-layer (hii) and the cha racteristics of a-Si solar cells are calculated. It is found that stabilize d-efficiency is increased when the distribution of electrons, holes and ele ctric field inside the absorber-layer were controlled. In this study, carri er concentration of i-layer, p/i interface and i/n interface are investigat ed by calculation. As a result, stabilized-efficiency of 8.1% of a conventi onal a-Si solar cell could establish a high stabilized-efficiency of 9.3% b y increasing the N-A as same as the density of defect states in i-layer and also by applying partially doping near p-side of i-layer.