A new type of stacking fault in beta-SiC

A new type of stacking fault was found in ultrapure and ultrafine beta -SiC in images obtained by high-resolution transmission electron microscopy (HR -TEM). The beta -SiC particles were prepared by the plasma chemical vapor d eposition (plasma-CVD) method and quenched rapidly from the gas phase. This type of stacking fault disappeared in the specimen heated at 1850 degreesC for 10 min in Ar atmosphere. The proposed stacking fault was examined from the viewpoints of energy and synthetic condition.