Quantum mechanical influence on flat-band capacitance in metal-oxide-semiconductor structures with a nanometer-thick silicon oxide film and the impact of oxide charge evaluation

In this paper, we describe theoretically how the quantum-mechanical carrier distribution in the flat-band condition influences the Bat-band capacitanc e. It is numerically demonstrated that the semiclassical method overestimat es the flat-band capacitance when the quantum-mechanical effect is signific ant. It is also shown that the quantum-mechanical flat-band capacitance at the gate poly-Si/SiO2 interface significantly influences the total flat-ban d capacitance and oxide charge evaluation.