Microwave dielectric properties and microstructures of V2O5-modified Zr0.8Sn0.2TiO4 ceramics

The effects of V2O5 addition on the microwave dielectric properties and the microstructures of (Zr-0.8, Sn-0.2)TiO4 ceramics have been investigated. I t is found that low-level doping of ZnO (1 wt%) and V2O5 (up to 2 wt%) can significantly improve the densification ability and the dielectric properti es of (Zr-0.8, Sn-0.2)TiO4 ceramics. (Zn-0.8, Sn-0.2)TiO4 ceramics with add itives could be sintered to a theoretical density higher than 95% at 1300 d egreesC due to the liquid-phase effect of V2O5 addition. The dielectric con stant (epsilon (r)) increased with increasing sintering temperature and sat urated at 1300 degreesC. The temperature coefficient of resonant frequency (tau (f)) was not significantly affected while the unloaded quality factor Q was promoted by V2O5 addition. The epsilon (r) value of 37.3, the Q x f v alue of 51500 (at 7 GHz) and the tau (f) value of -2.1 ppm/degreesC were ob tained for the 1 wt% ZnO-doped (Zr-0.8, Sn-0.2)TiO4 ceramics with 1 wt% V2O 5 addition sintered at 1300 degreesC.