Effect of crystal orientation on dielectric properties of lead zirconium titanate thin films prepared by reactive RF-sputtering

Theoretical calculations base on phenomenology of ferroelectrics have been previously reported for lead zirconium titanate (PZT) system. This paper of fers an experimental comparison of the crystal orientation dependence of di electric properties for PZT thin films grown using reactive RF-sputtering. Highly oriented PZT thin films with a rhombohedral composition have been gr own in different orientations using selective rapid thermal annealing cycle s. The PZT(100) oriented films showed larger dielectric constant and loss c ompared tp PZT(111) films. The PZT(100) films possessed sharp square-like h ysteresis loops indicating a instantaneous switching of domains at the coer cive field whereas the PZT(111) films showed smooth hysteresis loops as exp ected from our phenomenological calculations.