Deposition of titanium oxide films with high dielectric constants on silicon by an ion beam assist deposition technique

Titanium-dioxide (TiOx) thin films were deposited on n-type Si wafers by an ion beam assist deposition technique utilizing an oxygen ion beam source a nd a Ti electron beam evaporator. The chemical structure of the TiOx thin f ilms was determined by Rutherford backscattering spectrometry, X-ray diffra ction, and X-ray photoelectron spectroscopy, which revealed that the TiOx t hin films consisted of rutile TiO2 and O-deficient rutile TiO2 here and thr oughout. The TiOx films had high dielectric constants ranging from 30 epsil on (0) to 160 epsilon (0), which depended significantly on substrate temper ature and oxygen ion energy.