A. Quema et al., Terahertz-time domain spectroscopic measurement of moderately-doped silicon using InAs emitter under magnetic field, JPN J A P 1, 40(2A), 2001, pp. 867-872
The complex refractive index of silicon using terahertz-time domain spectro
scopy (THz-TDS), with an InAs wafer under the influence of a magnetic field
as emitter, has been studied. By applying a magnetic field on the InAs emi
tter, the detected temporal waveform broadens and the spectral weight of it
s Fourier spectrum shifts toward the low frequency region. Calculating the
real in) and imaginary (K) parts of the complex refractive index of silicon
, it is found that with the application of a magnetic held the plots of the
se quantities in the low frequency region (sub-terahertz region) are smooth
er than those without magnetic field. These features indicate that a signif
icant enhancement of the signal-to-noise (SIN) ratio in the low frequency r
egion can be obtained by applying a magnetic field on the InAs emitter.