Experimental studies of 90 degrees Bragg reflection from a sub-micron InxGa1-xAs single-crystal film deposited on a GaAs substrate

Experimental studies of a 90 degrees Bragg reflection from a thin surface I nxGa1-xAs Layer grown on a GaAs substrate are reported and discussed. The e xperiment was performed on the undulator beamline BL29XU at the SPring-8. T wo-dimensional (angular deviation from 90 degrees position versus incident synchrotron radiation energy) diffraction intensity profiles were collected from six samples with different In contents (x = 0.2-1.5%) and different l ayer thicknesses (0.5-1.5 mum). Observation of the layer performing as a th in-film optical interferometer (filter) and a discrepancy between layer-sub strate lattice mismatch values obtained from standard (400) and extreme 90 degrees reflection measurements (using the same radiation energy) are discu ssed.