Influence of zinc co-doping on carbon doped InGaAs

Authors
Keiper, D Sermage, B Benchimol, JL
Citation
D. Keiper et al., Influence of zinc co-doping on carbon doped InGaAs, JPN J A P 2, 40(2B), 2001, pp. L137-L139
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
40
Issue
2B
Year of publication
2001
Pages
L137 - L139
Database
ISI
SICI code
Abstract
We have investigated the effect of Zn co-doping in metal-organic vapor-phas e epitaxy (MOVPE) growth of highly carbon doped In0.53Ga0.47As/InP layers u sing nitrogen carrier gas. A Zn concentration of 3 x 10(18) cm(-3) for a C concentration of 1.8 x 10(19) cm(-3) leads to a significantly increased min ority carrier lifetime, and also to slightly improved majority carrier char acteristics. At this concentration the Zn diffusion is not crucial, and thi s technique may have important applications for InP based hetero bipolar tr ansistors (HBTs).