Tantalum aluminum alkoxide as a double-metal precursor for metalorganic chemical vapor deposition of Sr2AlTaO6

Authors
Zama, H Takahashi, Y Tanabe, K Morishita, T
Citation
H. Zama et al., Tantalum aluminum alkoxide as a double-metal precursor for metalorganic chemical vapor deposition of Sr2AlTaO6, JPN J A P 2, 40(2B), 2001, pp. L167-L169
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
40
Issue
2B
Year of publication
2001
Pages
L167 - L169
Database
ISI
SICI code
Abstract
We proposed resolving the poor controllability in the metalorganic chemical vapor deposition (MOCVD) of a complex oxide film consisting of a few metal elements, Sr2AlTaO6 (SAT) film, by using a double-metal source, tantalum a luminum isopropoxide TaAl(O-iC(3)H(7))(8). It had a melting point as low as 93 degreesC and generated suitable vapor pressure for MOCVD at a temperatu re of 100 degreesC. The supply metal ratio, Al/Ta. was similar to 1. becaus e it remained a double-metal structure in the vapor phase. We grew stoichio metric SAT films using it as a metal source.