Inductively coupled plasma etching of InP using N-2/H-2

Authors
Chen, HY Ruda, HE Navarro, AZ
Citation
Hy. Chen et al., Inductively coupled plasma etching of InP using N-2/H-2, J APPL PHYS, 89(10), 2001, pp. 5322-5325
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
10
Year of publication
2001
Pages
5322 - 5325
Database
ISI
SICI code
0021-8979(20010515)89:10<5322:ICPEOI>2.0.ZU;2-X
Abstract
Inductively coupled plasma etching of InP in N-2/H-2 is demonstrated. The d ependence of etch rates on N-2/H-2 composition, radio frequency power and e tching pressure is presented. An optimized process is developed and shown t o be suitable for the slow, well-controlled, etching of InP-based nanostruc tures, while yielding excellent surface morphology. (C) 2001 American Insti tute of Physics.