Rapid crystallization of silicon films using electrical-current-induced joule heating

Melt-regrowth properties of 60-nm-thick silicon films were characterized in the case of electrical-current-induced joule heating. The electrical energ y accumulated at a capacitance caused melting of the silicon films via joul e heating with a maximum intensity at 1.5x10(6) W/cm(2). The melt-regrowth duration increased from 6 to 75 mus as the capacitance increased to 0.05-1. 5 muF. Crystalline properties of the silicon films were also investigated. 7 mum long crystalline grains with the (110) preferential crystalline orien tation were observed using a transmission electron microscope. The tensile stress at 3.4x10(8) Pa remained in the films. The analysis of electrical co nductivity resulted in a density of defect states of 3.5x10(16) cm(-3) in t he films. The product of the generation efficiency, the carrier mobility an d the average carrier lifetime was estimated to be similar to 10(-3) cm(2)/ V. (C) 2001 American Institute of Physics.