An investigation on the modeling of transient enhanced diffusion of ultralow energy implanted boron in silicon

We have investigated and modeled the B diffusion in Si following ultralow e nergy implantation. Secondary ion mass spectrometry measurements revealed t hat B diffusion is transient enhanced. For the simulation we have used a ki ck-out model which requires only two uncorrelated parameters able to descri be the microscopical processes involved. By optimizing the parameters, an e xcellent agreement between the simulated and the experimental profile broad ening is achieved. Moreover, an extension of the previous model that accoun ts for interstitial cluster formation and dissolution was implemented in or der to achieve a better description of B diffusion. The extracted parameter s are discussed and compared with published values. (C) 2001 American Insti tute of Physics.