Pulsed laser deposition (PLD) has been used to fabricate polymer/carbon nan
ocomposite thin films for use in chemical sensors (chemiresistors). Ethylen
e vinyl acetate copolymer (EVA) films (undoped and 20% carbon by weight) we
re deposited using an ArF excimer laser (193 nm) at fluences between 150 an
d 300 mJ/cm(2). The structure and morphology of the deposited films were ch
aracterized using Fourier transform infrared spectroscopy (FTIR), Raman sca
ttering, and transmission and scanning electron microscopy (TEM). An analys
is of the FTIR spectra indicates that a film deposited using an undoped EVA
target is primarily polyethylene, suggesting that the acetate group is pho
tochemically or photothermally removed from the starting material. Gas phas
e measurements of the laser-evaporated material using a quadrupole time of
flight mass spectrometer confirm the production of the acetyl radical on th
e target surface. Analysis of TEM of films deposited using C-doped targets
shows that the carbon black particles (initially 50 nm particles in 1 mum a
gglomerates) are broken down into particles that are less than or equal to
50 nm in the deposited film. Incorporation of carbon into the target reduce
s the degree of photochemical damage of the starting material, as shown in
the FTIR spectra of the deposited film. The sensitivity and response time o
f chemiresistors fabricated from 6 mum thick composite films on top of gold
electrodes were measured using toluene vapor (548 ppm). The chemiresistors
exhibited a reversible and fast (<1.3 s) response to the vapor. In compari
son to data reported in the literature, chemiresistors fabricated from PLD
films are significantly better than devices fabricated using a more convent
ional polymer film growth technique. (C) 2001 American Institute of Physics
.