Temperature dependence of electric-field induced photoluminescence from anInGaN-based light-emitting diode

Temperature dependence of reverse-biased photoluminescence has been investi gated for understanding the radiative recombination mechanism in an InGaN s ingle-quantum-well light-emitting diode. It is found that the applied-volta ge dependence of luminescence intensities is strongly affected by temperatu re from 17 to 100 K, and a dramatic decrease in the luminescence intensity is observed over 100 K. The model of a field ionization of excitons cannot explain this dramatic decrease in the luminescence intensity. It is therefo re suggested that the free-carrier recombination process becomes dominant o ver 100 K. Two emission components are found on the condition of reverse bi as. The lower-energy component becomes strongly dependent on reverse-bias v oltage with increasing temperature, and fully disappears under the applied voltage of only -2 V at 100 K. (C) 2001 American Institute of Physics.