Dynamic characteristics of dislocations in highly boron-doped silicon

Authors
Yonenaga, I Taishi, T Huang, X Hoshikawa, K
Citation
I. Yonenaga et al., Dynamic characteristics of dislocations in highly boron-doped silicon, J APPL PHYS, 89(10), 2001, pp. 5788-5790
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
10
Year of publication
2001
Pages
5788 - 5790
Database
ISI
SICI code
0021-8979(20010515)89:10<5788:DCODIH>2.0.ZU;2-N
Abstract
The dynamic behavior of dislocations in highly boron (B)-doped Si crystals with concentration up to 2.5x10(20) cm(-3) is investigated using the etch p it technique. Suppression of the generation of dislocations from a surface scratch is found for B-doped Si and the critical stress for dislocation gen eration increases with B concentration, which is interpreted in terms of di slocation locking due to impurity segregation. The velocity of dislocations in B-doped crystals is revealed to increase by increasing the B concentrat ion. (C) 2001 American Institute of Physics.