Characterization of nanopipes/dislocations in silicon carbide using ballistic electron emission microscopy

We report on the characterization of the nanopipe/dislocation related defec ts in silicon carbide (SiC) wafers using a ballistic electron emission micr oscopy (BEEM) technique. While the rest of the techniques were just limited to providing structural information such as length and width, the dual mod e of the BEEM technique is shown to provide physical insight into the natur e of these defects in SiC. The presence of excess of carrier density at the dislocation site, and its impact on the device characteristics in terms of junction breakdown, is discussed within the scope of our experimental resu lts. (C) 2001 American Institute of Physics.