Influence of the InP substrate deoxidization temperature on the growth of Zn0.45Cd0.55Se epilayers

Zn0.45Cd0.55Se epilayers with lattice nearly matched to InP were grown at 3 60 degreesC by metalorganic chemical vapor phase deposition. The influence of deoxidization temperature of the InP substrate, on the structural and op tical properties and on the surface morphologies of the Zn0.45Cd0.55Se epil ayer was investigated. With constant deoxidization duration of 10 min for e ach growth, the optimal deoxidization temperature was found to be around 48 0 degreesC. Both too high and too low deoxidization temperatures cause a se rious deterioration of the quality of epilayers by generating defects in th e epilayers. Surface morphology studies showed that there are two types of structural defects, which are responsible for the reduced quality of the ep ilayers. For samples grown on InP deoxidized below the optimal temperature, high density of mound-like structures, as a result of 3D island growth and grain boundaries were found on the surface. While for samples grown on InP deoxidized at or above the optimal temperature, crater-like structures, wh ich may be caused by In droplets formed during the deoxidization, were foun d on the surface. (C) 2001 Elsevier Science B.V. All rights reserved.