Top seeded solution growth of [Rb,Cs]TiOAsO4

Citation
J. Nordborg et al., Top seeded solution growth of [Rb,Cs]TiOAsO4, J CRYST GR, 224(3-4), 2001, pp. 256-268
Citations number
34
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
224
Issue
3-4
Year of publication
2001
Pages
256 - 268
Database
ISI
SICI code
0022-0248(200104)224:3-4<256:TSSGO[>2.0.ZU;2-L
Abstract
Large single crystals of KTiOPO4 (KTP) isomorphs RbTiOAsO4 (RTA), CsTiOAsO4 (CTA) and RbxCs1-xTiOAsO4 (RCTA), x = 0.93, have been grown using the top seeded solution growth technique in a temperature controlled four-zone furn ace. The seed was situated at the top end of the crystal, which minimized t he part of the crystal that is strongly affected by the seed. The combinati on of Rb and Cs in RCTA is more favorable for crystal growth, in comparison with the end members RTA and CTA. Mixed crystals are Rb-enriched and conta in only 20-30% of the Cs content of the flux composition. The IR transmissi on is slightly higher for CTA than for RTA. Various etching solutions have been used to study the domain patterns revealing that these crystals grown above the transition temperature consist of a few large domains. (C) 2001 E lsevier Science B.V. All rights reserved.