Rapid thermal processing of Bi2Ti2O7 thin films grown by chemical solutiondecomposition

Bi3Ti2O7 thin films were successfully prepared on n-type Si(1 0 0) substrat e by using chemical solution decomposition (CSD) technique followed by rapi d thermal annealing (RTA), The structural properties were studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The dielectric propert ies of the films were evaluated. The leakage current density of Bi2Ti2O7 th in films is of the order of 10(-7) A/cm(2) when the applied voltage is betw een -18 and + 18 V, It is much lower than that of films treated by normal t hermal processing. The dielectric constant varies from 159 to 150 within th e frequency range of 10-100 KHz, while the dissipation factor is lower than 0.02 in this range. (C) 2001 Elsevier Science B.V. All rights reserved.