TEMPERATURE-DEPENDENCE OF THE PHOTOELECTRON EMISSION FROM INTENTIONALLY OXIDIZED COPPER

Citation
Y. Terunuma et al., TEMPERATURE-DEPENDENCE OF THE PHOTOELECTRON EMISSION FROM INTENTIONALLY OXIDIZED COPPER, Applied surface science, 115(4), 1997, pp. 317-325
Citations number
24
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
115
Issue
4
Year of publication
1997
Pages
317 - 325
Database
ISI
SICI code
0169-4332(1997)115:4<317:TOTPEF>2.0.ZU;2-E
Abstract
The characteristics of the photoelectron emission (PE), measured by va rying the wavelength of incident light, from copper subjected to oxida tion treatment in air have been investigated as a function of the meas urement temperature between 25 and 300 degrees C using a gas-flow coun ter. The intensity of PE at a certain measurement temperature decrease d with increasing oxidation temperature (100 to 800 degrees C) and the intensity of PE for a given oxidation temperature increased with decr easing measurement temperature. The PE behavior was correlated to the chemical and electrical nature of the surfaces analyzed by X-ray photo electron spectroscopy and surface potential measurement. A mechanism i s proposed for the PE of the untreated sample which exhibited a comple tely different PE behavior. (C) 1997 Elsevier Science B.V.