STUDY OF CR OVERLAYER ON INP(100) BY SYNCHROTRON-RADIATION PHOTOEMISSION

Authors
ZHANG FP XU PS XU SH LU ED YU XJ ZHANG XY
Citation
Fp. Zhang et al., STUDY OF CR OVERLAYER ON INP(100) BY SYNCHROTRON-RADIATION PHOTOEMISSION, Applied surface science, 115(4), 1997, pp. 361-364
Citations number
6
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
115
Issue
4
Year of publication
1997
Pages
361 - 364
Database
ISI
SICI code
0169-4332(1997)115:4<361:SOCOOI>2.0.ZU;2-7
Abstract
The growth and electronic structure of the Cr/InP(100) interface are s tudied by synchrotron radiation photoemission. At the first stage of g rowth, Cr atoms cover the whole InP surface. With increasing Cr covera ge, Cr reacts strongly with the substrate and creates a disruptive int erface. The electronic structure of the ultrathin Cr film is found to be different from that of bulk Cr film, and the possibility that magne tic ordering exists in the ultrathin overlayer of Cr is proposed. (C) 1997 Elsevier Science B.V.